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规格: Specification:
电压/Voltage 1.8V,3.3V
温度/Temperature -40℃ — 85℃ / 105℃
容量/Density 512Mb/1Gb / 2Gb / 4Gb
封装/Package WSON 8*6,BGA 24
速度/Speed 83MHz,104MHz

SPI NAND Flash

单香蕉app免费下载设计的串行通信方案,引脚少、封装尺寸小,且在同一颗粒上集成了存储阵列和控制器 ,并带有内部ECC模块,使其在满足数据传输效率的同时,既节约了空间,又提升了稳定性。产品现拥有38nm及2xnm的成熟工艺制程,未来将继续研发1xnm先进工艺制程。产品可提供3.3V /1.8V两种电压,具备WSON、BGA多种封装形式,不仅能满足常规应用场景,也使其在目前日益普及的由电池驱动的移动互联网及物联网设备中保持低功耗,有效延长设备的待机时间,也更灵活地适用于不同应用场景。目前,91香蕉app下载安装无限看-丝瓜ios苏州晶体汁乎91香蕉国产线观看免费茄子的SPI NAND Flash 已在第七届中国电子信息博览会中获得创新奖及2019年度最佳国产存储香蕉app免费下载产品奖。

Dosilicon's SPI NAND Flash is a serial peripheral interface SLC NAND Flash which the memory array and controller are integrated on one cell, with an internal ECC module. It not only offers satisfactory data transmission efficiency, but also saves space and enhances stability. It now incorporates 38 nm and 2x nm process technology, and will keep developing 1x nm process in the future. SPI NAND Flash is suitable for two voltages, and comprises several packages, which are applicable to varied application scenarios. Dosilicon's SPI NAND Flash won the Innovation Award at the 7th China Electronic Information Expo and the Best Domestic Memory Chip Award 2019.

type Part Number Density Voltage Speed(MHz/CLK) Temp. Range PKG Type Datasheet

SPI NAND

DS35M12B-ID

512Mb

1.8V

83MHz

-40℃~85℃

WSON 6x5

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DS35M12B-IB

WSON 8x6

DS35M1GA-IB

1Gb

104MHz

WSON 8x6

DS35M1GA-IW

KGD

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DS35M1GB-ID

83MHz

WSON 6x5

DS35M1GB-IB

WSON 8x6

DS35Q1GA-IB

3.3V

104MHz

WSON 8x6

DS35Q1GA-IW

KGD

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DS35Q1GB-IB

WSON 8x6

DS35M2GA-IB

2Gb

1.8V

WSON 8x6

DS35M2GA-IC

BGA 24

DS35M2GA-IW

KGD

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DS35M2GB-IB

83MHz

WSON 8x6

DS35Q2GA-IB

3.3V

104MHz

WSON 8x6

DS35Q2GA-IC

BGA 24

DS35Q2GA-IW

KGD

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DS35Q2GB-IB

WSON 8x6

DS35M4GM-IB

4Gb

1.8V

83MHz

WSON 8x6

DS35Q4GM-IB

3.3V

104MHz

WSON 8x6

DS35Q2GA-A2B

2Gb

3.3V

104Mhz

-40℃~105℃

WSON 8x6

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DS35Q2GA-A2E

BGA 24(5X5-1)

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